Full Spectrum Product Technology
    
 

RSLE is developing its first product, the HYBRID, with a Nitride Thin Film semiconductor material technology that captures a wider spectrum of the sun's solar spectrum. Nitride semiconductors are known for their robustness and reliability, and RSLE’s products enjoy a thin film format that allows reduced use of materials and lower manufacturing costs.

Nitride alloys, specifically Indium-Gallium-Nitrides have a direct band gap spanning nearly the entire solar spectrum.  Their large absorption coefficients, allow the complete absorption of the photons in photovoltaic devices with a thin film thickness of 1 micron.

 
  To illustrate the tunability of this technology to capture a larger portion of the solar energy emitted by the sun, illustrated on the above right are common semi-conductor band gaps as compared to the broader In1-xGaxN bandgaps possible. The diagram illustrated also on the right is the direct terrestrial solar radiation spectral distribution.