RSLE product technology utilizes advanced Nitride and dilute Nitride semiconductor technology to achieve tunable bandgaps. This allows higher practical efficiencies and lower costs than achievable now with competitive products. RSLE is developing its first product, the HYBRID, with a Nitride InGaN on silicon semiconductor material technology that captures a wider spectrum of the sun's solar spectrum. Nitride semiconductors are known for their robustness and reliability, and RSLE’s products enjoy a thin film format that allows reduced use of materials and lower manufacturing costs.

Nitride alloys, specifically Indium-Gallium-Nitrides have a direct band gap spanning nearly the entire solar spectrum.  Their large absorption coefficients, allow the complete absorption of the photons in photovoltaic devices with a thin film thickness of 1 micron.

To illustrate the tunability of this technology to capture a larger portion of the solar energy emitted by the sun, illustrated on the above right are common semi-conductor band gaps as compared to the broader In1-xGaxN bandgaps possible. The diagram illustrated also on the right is the direct terrestrial solar radiation spectral distribution.

Press Release:

RoseStreet Labs Energy Demonstrates World's First Tandem Nitride/Silicon Solar Cell